BDW93B/bdw93c bdw94b/bdw94c complementary silicon power darlington transistors n sgs-thomson preferred salestypes n complementary pnp - npn devices n integrated antiparallel collector-emitter diode applications n linear and switching industrial equipment description the BDW93B, and bdw93c are silicon epitaxial-base npn power transistors in monolithic darlington configuration and are mounted in jedec to-220 plastic package. they are intented for use in power linear and switching applications. the complementary pnp types are the bdw94b and bdw94c respectively. internal schematic diagram june 1997 absolute maximum ratings symbol parameter value unit npn BDW93B bdw93c pnp bdw94b bdw94c v cbo collector-base voltage (i e =0) 80 100 v v ceo collector-emitter voltage (i b =0) 80 100 v i c collector current 12 a i cm collector peak current 15 a i b base current 0.2 a p tot total dissipation at t c 25 o c80w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c for pnp types voltage and current values are negative. 1 2 3 to-220 r 1 typ. = 10 k w r 2 typ. = 150 w 1/6
thermal data r thj-case thermal resistance junction-case 1.56 o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e =0) for BDW93B/94b v cb =80v for bdw93c/94c v cb = 100 v t case = 150 o c for BDW93B/94b v cb =80v for bdw93c/94c v cb = 100 v 100 100 5 5 m a m a ma ma i ceo collector cut-off current (i b =0) for BDW93B/94b v cb =80v for bdw93c/94c v cb = 100 v 1 1 ma ma i ebo emitter cut-off current (i c =0) v eb =5v 2 ma v ceo(sus ) * collector-emitter sustaining voltage (i b =0) i c =100ma for BDW93B/94b for bdw93c/94c 80 100 v v v ce(sat) * collector-emitter saturation voltage i c =5a i b =20ma i c =10a i b =100ma 2 3 v v v be(s at) * base-emitter saturation voltage i c =5a i b =20ma i c =10a i b =100ma 2.5 4 v v h fe * dc current gain i c =3a v ce =3v i c =5a v ce =3v i c =10a v ce =3v 1000 750 100 20k v f * parallel-diode forward voltage i f =5a i f =10a 1.3 1.8 2 4 v v h fe : small signal current gain i c =1a v ce =10v f=1mhz 20 * pulsed: pulse duration = 300 m s, duty cycle 1.5 % for pnp types voltage and current values are negative. BDW93B/bdw93c/bdw94b/bdw94c 2/6
safe operating area collector emitter saturation voltage (npn types) collector emitter saturation voltage (npn types) dc current gain (npn types) dc transconductance (npn types) collector emitter saturation voltage (pnp types) BDW93B/bdw93c/bdw94b/bdw94c 3/6
saturated switching characteristics (npn types) collector emitter saturation voltage (pnp types) saturated switching characteristics (pnp types) dc current gain (pnp types) dc transconductance (pnp types) BDW93B/bdw93c/bdw94b/bdw94c 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c BDW93B/bdw93c/bdw94b/bdw94c 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada- china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a ... BDW93B/bdw93c/bdw94b/bdw94c 6/6
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